Explain How a Potential Barrier is Developed in a p-n Junction Diode

Answer : With the formation of an electric field, the depletion area is active as a barrier in the specific area. The quantity of potential difference needed for the movement of electrons through the barrier is called the potential barrier. The development of the barrier potential depends upon the semiconductor material, temperature, and doping quantity. In the p-n junction diode, on the p side, the holes act as the majority carrier and on the n-side, electrons are the majority carriers in the semiconductor. The diffusion among the majority carriers lowers the positive and negative charges of the p and n sides. The voltage is developed to prevent electrons’ movement, referred to as the development of a potential barrier.