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DRAM Full Form

Read this article to know about the full form of DRAM, its history, advantages and disadvantages.

Table of Content

Dynamic random access memory (DRAM) is a memory type. Each bit of information is kept in a memory cell of the MOS-based random access memory. A transistor and a small capacitor make up memory cells. The word “Dynamic” is used because the capacitor’s slow charge leak causes DRAM to change gradually from a state of 0 to 1. DRAM rewrites the data in the capacitors, restoring them to their initial charge. Hence it requires an external memory refresh to stop this. DRAM typically uses hundreds of millions to billions of DRAM memory cells.

Working of DRAM
History of DRAM
Advantages
Disadvantages

Working of DRAM

Memory is a two-dimensional grid-arranged collection of data or software code. DRAM will store bits of data in what is referred to as storage, or a memory cell made up of a transistor and a capacitor. The storage cells are typically arranged in a rectangular shape. A charge passing through a transistor at a column causes it to turn on. A DRAM storage cell must be refreshed or given a new electronic charge every few milliseconds because it is dynamic and must account for charge leakage from the capacitor.

The memory cells will work in tandem with extra circuitry that can retrieve or recover data from memory cells, recognise rows and columns, keep track of the refresh process, and notify a cell whether or not to accept a charge.

When building a computer, a system designer may use DRAM as one sort of semiconductor memory. Additional memory options include electrically erasable programmable read-only memory (EEPROM), NOR flash, and NAND flash. Numerous systems use a variety of memory types.

History of DRAM

In a Toshiba calculator in 1965, DRAM made its debut in a capacitive form made up of bipolar memory cells. In the same year, IBM created a 16-bit silicon memory chip. However, magnetic-core memory competed better than the bipolar DRAM that was then available. This was true of DRAM before the creation of the metal-oxide-semiconductor field-effect transistor (MOSFET), which resulted in the metal-oxide-semiconductor DRAM, or MOS DRAM. The MOS DRAM patent was authorised in 1968. In 1969, Intel developed DRAM using a three-transistor cell.

In 1970, Intel improved their DRAM product by introducing the Intel 1103 device. Around this time, MOS memory began to acquire market share compared to magnetic-core memory. The Mostek MK4096 4 Kb DRAM was also developed in 1973. In this DRAM, multiplexed row and column address lines were used for the first time. The Mostek MK4096 could fit in small packaging with a low pin count because it cut the required number of address lines in half.