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Question Based on Fermi Level Shift in Extrinsic Semiconductor

Lesson 2 of 10 • 6 upvotes • 9:35mins

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Akhilesh Pandey

Concepts covered: Energy band diagram, Intrinsic Carrier concentration, extrinsic carrier concentration, shift of Fermi Silicon is doped with boron to a concentration of 4 × 1017 atoms/cm3 . Assume the intrinsic carrier concentration of silicon to be 1.5 × 1010 /cm3. Compared to undoped silicon, the Fermi level of doped silicon

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