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GATE-2012 One Mark Questions and Solutions(Electronic Devices)
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Specially designed for GATE EC Aspirants  Covers previous 10 years (2009-2018) 1 mark questions of Electronic Devices  Detailed solution provided  Related concept has been also explained

AKHILESH PANDEY
B.Tech. in EC, GATE 2017 AIR 18, YouTuber (channel name - STUDENT MODULATOR), 5 years Teaching Experience

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1. Previous10 Years(2009-18) 1 Mark Que.&Sol Subject: Electronic Devices Year:2012 By- AKHILESH PANDEY

2. About Me B. Tech. in Electronics & Communication GATE 2017 AIR 18 (EC) 5 Years Teaching Experience > Youtuber (channel- STUDENT MODULATOR)

3. The i-v characteristics of the diode in the circuit given below are -0.7 500 1 kJ2 0 A < 0.7 V The current in the circuit is (A) 10 mA (C) 6.67 mA 10 V (B) 9.3 mA (D) 6.2 mA

4. Sol. 1 Characteristic of diode: Diode is active when forward biased, cut-off when reverse biased. In forward bias, current increases exponentially beyond cut-in voltage. In reverse bias, a very small reverse saturation current flows. Vo Irs

5. For the given problem, the i-v characteristics of the diode is v2 0.7 V v-0.7 active 1 500 0 A v< 0.7 V cutoff Assume that the diode is active (i.e. v 2 0.7 V) So, current through diode is 10 V 1-0.7 500 Applying KVL, 10-i (1k)-v 0 10)ak)-v -0 500 10+(0.7) 10+1.4 500 _38 V +1 500

6. As we assumed that diode is active (forward biased), and we obtain the voltage across diode as v3.8 V Hence, our assumption is correct. Current through diode is v 0.7 3.8 0.7 3.1 500 500 0.0062 500 i 6.2 mA or

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