Practice Crystal Structure - CSIR-UGC NET Offered by Unacademy

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Crystal Structure

Quick practice

Question 1 of 5

Consider a conductor with impurities that has an intrinsic carrier density of $n_{1}$ . If $\mu_{e}$ and $\mu_{h}$ are the electron and hole mobilities, respectively, then for minimum conductivity, the expression for the hole concentration $n_{h}$ will be:

A

$n_{i} \sqrt{\mu_{e} \times \mu_{h}}$

B

$n_{i} \sqrt{\frac{\mu_{h}}{\mu_{e}}}$

C

$n_{i} \sqrt{\frac{\mu_{e}}{\mu_{h}}}$

D

$n^{{2}}_{i} \sqrt{\frac{\mu_{h}}{\mu_{e}}}$